AP100N07PIT

68V N-Channel Enhancement Mode MOSFET

AP100N07P/T REV1.0

永源微電子科技有限公司

Description

The AP100N07P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 68V ID =100A

RDS(ON) < 6.8mΩ @ VGS=10V （Type：5.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100N07P

TO-220-3L

AP100N07P XXX YYYY

1000

AP100N07T

TO-263-3L

AP100N07T XXX YYYY

800

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

68

V

VGS

Gate source voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

100

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

53

A

IDM

Pulsed drain current2)

360

A

IAS

Diode forward current

29

A

PD

Power dissipation

123

W

EAS

Single pulsed avalanche energy)

206

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.0

℃/W

RθJA

Thermal resistance, junction-ambient4)

62.5

℃/W