AP100N15D datasheet(1/7 Pages) APME

부품명	AP100N15D

상세설명	150V N-Channel Enhancement Mode MOSFET

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AP100N15D

150V N-Channel Enhancement Mode MOSFET

AP100N15D REV1.0

永源微电子科技有限公司

Description

The AP100N15D uses advanced APM-SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 150V ID =100A

RDS(ON) <18mΩ@ VGS=10V （Type：13.8mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100N15D

TO-252-3L

AP100N15D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

150

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Drain Current, VGS @ 10V

100

A

ID@TC=100

℃

Drain Current, VGS @ 10V

56

A

IDM

Pulsed Drain Current1

360

A

EAS

Single pulsed avalanche energy

280

mJ

PD@TC=25

℃

Total Power Dissipation

214

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

0.7

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

62.5

℃/W

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AP100N15D 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

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