AP85N06DF

65V N-Channel Enhancement Mode MOSFET

AP85N06DF REV1.0

永源微電子科技有限公司

Description

The AP85N06DF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 65V ID =85A

RDS(ON) < 5.2mΩ @ VGS=10V （Type：4.1mΩ）

Ciss≈1600PF

Application

BLDC

DC-DC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP85N06DF

PDN3*3-8L

AP85N06DF XXX YYYY

5000PCS

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

65

V

VGS

Gate source voltage

±20

V

ID@TC=25

℃

Continuous drain current1)

85

A

ID@TC=100

℃

Continuous drain current1)

52

A

IDM

Pulsed drain current2)

328

A

IAS

Diode forward current

45

A

PD@TC=25

℃

Power dissipation

65.8

W

EAS

Single pulsed avalanche energy)

89

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.9

℃/W

RθJA

Thermal resistance, junction-ambient4)

25

℃/W