AP85N08BT datasheet(1/8 Pages) APME

부품명	AP85N08BT

상세설명	80V N-Channel Enhancement Mode MOSFET

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AP85N08BPIT

80V N-Channel Enhancement Mode MOSFET

AP85N08BPIT RVE1.1

永源微電子科技有限公司

Description

The AP85N08BP/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 80V ID =85A

RDS(ON) < 8.5mΩ VGS=10V （

Type：6.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP85N08BP

TO-220-3L

AP85N08BP XXX YYYY

1000

AP85N08BT

TO-263-3L

AP85N08BT XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (VGS=0V）

80

V

VGS

Gate-Source Voltage (VDS=0V)

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

85

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

55

A

IDM

Drain Current-Continuous@ Current-Pulsed

300

A

PD@TC=25℃

Maximum Power Dissipation(Tc=25℃)

133

W

EAS

Single pulse avalanche energy

550

mJ

Tstg，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal Resistance Junction-Case

0.94

℃

/W

RθJA

Thermal Resistance Junction-Ambient

62.5

℃

/W

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A POWER MICROELECTRONIC...	AP85N08NF	766Kb / 7P	85V N-Channel Enhancement Mode MOSFET REV1.0

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