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AP85N08NF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP85N08NF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP85N08NF 85V N-Channel Enhancement Mode MOSFET AP85N08NF REV1.0 永源微電子科技有限公司 Description The AP85N08NF uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 85V ID =85A RDS(ON) < 5.8mΩ VGS=10V (Type:4.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP85N08NF PDFN5X6-8L AP85N08NF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 85 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 86 A IDM Pulsed Drain Current 544 A EAS Single Pulse Avalanche Energy 434 mJ PD@TC=25℃ Total Power Dissipation4 166 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 0.65 ℃ /W RθJC Thermal Resistance Junction-Case 62.5 ℃ /W |
유사한 부품 번호 - AP85N08NF |
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