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AP90N02NF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP90N02NF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP90N02NF 20V N-Channel Enhancement Mode MOSFET AP90N02NF RVE1.0 永源微電子科技有限公司 Description The AP90N02NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =90A RDS(ON) < 2.0mΩ@ VGS=10V (Type:1.6mΩ) RDS(ON) < 2.5mΩ@ VGS=4.5V (Type:1.9mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP90N02NF PDFN5*6-8L AP90N02NF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 90 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 48 A IDM Pulsed Drain Current note1 270 A EAS Single Pulsed Avalanche Energy note2 80 mJ IAS Avalanche Current 40 A PD Power Dissipation 83 W RθJA Thermal Resistance Junction-ambient 25 ℃ /W RθJC Thermal Resistance, Junction to Case 1.5 ℃ /W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ |
유사한 부품 번호 - AP90N02NF |
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유사한 설명 - AP90N02NF |
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