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AP90N03NF 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP90N03NF 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP90N03NF 30V N-Channel Enhancement Mode MOSFET AP90N03NF RVE1.0 永源微電子科技有限公司 Description The AP90N03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =90A RDS(ON) < 6.5mΩ @ VGS=10V (Type:4.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP90N03NF PDFN5X6-8L AP90N03NF XXXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 90 A ID@TC=75℃ Continuous Drain Current, VGS @ 10V1 50 A IDM Pulsed Drain Current2 240 A EAS Single Pulse Avalanche Energy3 56 mJ IAS Avalanche Current 15 A PD@TC=25℃ Total Power Dissipation4 46 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-Ambient 1 25 ℃ /W RθJC Thermal Resistance Junction-Case1 2.72 ℃ /W |
유사한 부품 번호 - AP90N03NF |
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