AP90N06PIT

60V N-Channel Enhancement Mode MOSFET

AP90N06P/T RVE1.0

永源微電子科技有限公司

Description

The AP90N06P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =90A

RDS(ON) < 7.0mΩ @ VGS=10V （Type：5.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N06P

TO-220-3L

AP90N06P XXX YYYY

1000

AP90N06T

TO-263-3L

AP90N06T XXX YYYY

800

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID

Continuous drain current1)

90

A

IDM

Pulsed drain current2)

320

A

IS

Diode forward current

37

A

ISP

Pulsed source current

210

A

PD

Power dissipation

108

W

EAS

Single pulsed avalanche energy)

205.4

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.4

℃/W

RθJA

Thermal resistance, junction-ambient4)

62.5

℃/W