AP100N30MP

300V N-Channel Enhancement Mode MOSFET

AP100N30MP RVE1.0

永源微電子科技有限公司

Description

The AP100N30MP is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 300V ID =100A

RDS(ON) < 50mΩ @ VGS=10V （Type：44mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100N30MP

TO-247-3L

AP100N30MP XXX YYYY

300

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

300

V

ID

Continuous Drain Current

100

A

IDM

Pulsed Drain Current

300

A

VGSS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy

3000

mJ

IAS

Avalanche Current

80

A

EAR

Repetitive Avalanche Energy

525

mJ

PD

Power Dissipation (TC = 25ºC)

800

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

0.15

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

40

ºC/W