AP100P01D datasheet(1/7 Pages) APME

부품명	AP100P01D

상세설명	-15V P-Channel Enhancement Mode MOSFET

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AP100P01D

-15V P-Channel Enhancement Mode MOSFET

AP100P01D Rve1.0

臺灣永源微電子科技有限公司

Description

The AP100P01D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -15V

ID =-100 A

RDS(ON) < 3.5m

Ω @ VGS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100P01D

AP100P01D XXX YYYY

2500

Absolute Maximum Ratings (TA=25℃ unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-15

V

VGS

Gate-Source Voltage

±12

V

ID

Drain Current

– Continuous (TC=25℃)

-100

A

Drain Current

– Continuous (TC=100℃)

-54

A

IDM

Drain Current

– Pulsed1

-360

A

PD

Power Dissipation (TC=25℃)

41.67

W

Power Dissipation

– Derate above 25℃

0.33

W/℃

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction to ambient

62

℃/W

RθJC

Thermal Resistance Junction to Case

3

℃/W

TO-252-3L

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AP100P01D 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

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