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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP100P03D 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP100P03D 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP100P03D -30V P-Channel Enhancement Mode MOSFET AP100P03D RVE1.0 臺灣永源微電子科技有限公司 Description The AP100P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-100A RDS(ON) <6.5m Ω @ VGS=-10V Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100P03D TO-252-3L AP100P03D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TC = 25℃ -100 A ID Continuous Drain Current TC = 100℃ -59 A IDM Pulsed Drain Current note1 -360 A EAS Single Pulsed Avalanche Energy note2 210 mJ PD Power Dissipation TC = 25℃ 109 W R θJC Thermal Resistance, Junction to Case 1.4 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ |
유사한 부품 번호 - AP100P03D |
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유사한 설명 - AP100P03D |
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