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AP100P03T 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP100P03T 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 8 page ![]() AP100P03PIT -30V P-Channel Enhancement Mode MOSFET AP100P03P/T REV1.0 永源微電子科技有限公司 Description The AP100P03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-100A RDS(ON) <7.0mΩ @ VGS=-10V (Type:5.8mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100P03P TO-220-3L AP100P03P XXX YYYY 1000 AP100P03T TO-263-3L AP100P03T XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID@TA=25 ℃ Continuous Drain Current, VGS @ -10V1 70 A ID@TA=70 ℃ Continuous Drain Current, VGS @ -10V1 50 A IDM Pulsed Drain Current note1 -220 A EAS Single Pulsed Avalanche Energy note2 121 mJ PD@TA=25 ℃ Power Dissipation 65.2 W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ RθJC Thermal Resistance, Junction to Case 2.9 ℃/W RθJA Maximum Thermal Resistance, Junctionambient 62.5 ℃/W |
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