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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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M29F400B 데이터시트(PDF) 18 Page - STMicroelectronics |
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M29F400B 데이터시트(HTML) 18 Page - STMicroelectronics |
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18 / 34 page  Symbol Alt Parameter M29F400T / M29F400B Unit -55 -70 High Speed Interface Standard Interface Min Max Min Max tAVAV tWC Address Valid to Next Address Valid 55 70 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 ns tWLWH tWP Write Enable Low to Write Enable High 30 35 ns tDVWH tDS Input Valid to Write Enable High 25 30 ns tWHDX tDH Write Enable High to Input Transition 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 20 20 ns tAVWL tAS Address Valid to Write Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 45 45 ns tGHWL Output Enable High to Write Enable Low 0 0 ns tVCHEL tVCS VCC High to Chip Enable Low 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 ns tPHPHH (1,2) tVIDR RP Rise Time to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tWHRL (1) tBUSY Program Erase Valid to RB Delay 30 30 ns tPHWL (1) tRSP RP High to Write Enable Low 4 4 µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Table 15A. Write AC Characteristics, Write Enable Controlled (TA =0 to 70 °C, –40 to 85°C or –40 to 125°C) Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruc- tion which consists of writing the command B0h without any specific address. No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P/E.C. is suspended. The Toggle bits will stop toggling between 0.1 µs and 15µs after the Erase Suspend (ES) command has been writ- ten. The device will then automatically be set to Read Memory Array mode. When erase is sus- 18/34 M29F400T, M29F400B |
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