| 전자부품 데이터시트 검색엔진 |
|
AP150P02D 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
|
|
|||||||||||||||||||||||||||||
AP150P02D 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
|
1 / 7 page ![]() AP150P02D -20V P-Channel Enhancement Mode MOSFET AP150P02D REV1.0 永源微電子科技有限公司 Description The AP150P02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-150A RDS(ON) < 2.5mΩ @ VGS=-4.5V (Type:2.1mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP150P02D TO-252-3L AP150P02D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -150 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -76 A IDM Pulsed Drain Current2 450 A EAS Single Pulse Avalanche Energy3 450 mJ IAS Avalanche Current -50 A PD@TC=25℃ Total Power Dissipation4 104 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 15 ℃/W RθJC Thermal Resistance Junction-Case1 0.9 ℃/W |
유사한 부품 번호 - AP150P02D |
|
유사한 설명 - AP150P02D |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |