AP250N06PIT

60V N-Channel Enhancement Mode MOSFET

AP250N06P/T REV1.0

永源微電子科技有限公司

Description

The AP250N06P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =250A

RDS(ON) < 3.3mΩ @ VGS=10V （Type：2.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP250N06P

TO-220-3L

AP250N06P XXX YYYY

1000

AP250N06T

TO-263-3L

AP250N06T XXX YYYY

800

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

250

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

140

A

IDM

Pulsed drain current2)

712

A

IAS

Diode forward current

72

A

PD

Power dissipation

170

W

EAS

Single pulsed avalanche energy)

697

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

0.7

℃/W

RθJA

Thermal resistance, junction-ambient4)

62.5

℃/W