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AP280N08MP 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS

부품명 AP280N08MP
상세설명  85V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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제조업체  APME [A POWER MICROELECTRONICS]
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AP280N08MP
85V N-Channel Enhancement Mode MOSFET
AP280N08MP RVE1.0
永源微電子科技有限公司
Description
The AP280N08MP uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 85V ID =280A
RDS(ON) < 2.8mΩ VGS=10V （Type：2.1mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP280N08MP
TO-247-3L
AP280N08MP XXX YYYY
450
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
85
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V
280
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V
196
A
IDM
Pulsed Drain Current
1240
A
EAS
Single Pulse Avalanche Energy
1858
mJ
PD@TC=25
℃
Total Power Dissipation4
347.5
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient
0.53
℃/W
RθJC
Thermal Resistance Junction-Case
40
℃
/W


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