| 전자부품 데이터시트 검색엔진 |
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ST7FOXK2 데이터시트(PDF) 200 Page - STMicroelectronics |
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ST7FOXK2 데이터시트(HTML) 200 Page - STMicroelectronics |
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200 / 226 page ![]() Electrical characteristics ST7FOXF1, ST7FOXK1, ST7FOXK2 200/226 12.7 Memory characteristics TA = -40 °C to 85 °C, unless otherwise specified. Table 81. RAM and hardware registers characteristics Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by construction, not tested in production. Halt mode (or Reset) 1.6 V Table 82. Flash program memory characteristics Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash Write/Erase Refer to operating range of VDD with TA, Section 12.3.1 on page 190 4.5 5.5 V tprog Programming time for 1~32 bytes(1) 1. Up to 32 bytes can be programmed at a time. TA=−40 to +85 °C 5 10 ms Programming time for 4 kbytes TA=+25 °C 0.64 1.28 s tRET Data retention(2) 2. Data based on reliability test results and monitored in production. TA=+55 °C (3) 3. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25 °C 1k cycles IDD Supply current(4) 4. Guaranteed by Design. Not tested in production. Read / Write / Erase modes fCPU = 8 MHz, VDD = 5.5 V 2.6 mA No Read/No Write mode 100 µA Power down mode / Halt 00.1 µA |
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