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AP2302AI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP2302AI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP2302AI 20V N-Channel Enhancement Mode MOSFET AP2302AI RVE3.2 永源微电子科技有限公司 Description The AP2302AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =4.2A RDS(ON) < 32mΩ @ VGS=4.5V (Type:24mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2302AI SOT23L A2SHB 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 4.2 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 2.7 A IDM Pulsed Drain Current2 14.4 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃ /W RθJC Thermal Resistance Junction-Case1 80 ℃ /W |
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