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AP3401AI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP3401AI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP3401AI -30V P-Channel Enhancement Mode MOSFET AP3401AI RVE1.1 永源微電子科技有限公司 Description The AP3401AI uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-4.8A RDS(ON) < 50mΩ @ VGS=10V (Type:40mΩ) RDS(ON) < 55mΩ @ VGS=4.5V (Type:45mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3401AI SOT23L A19T 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±12 V ID@TC=25 ℃ Continuous Drain Current, VGS @ -10V1 -4.8 A ID@TC=100 ℃ Continuous Drain Current, VGS @ -10V1 -3.3 A IDM Pulsed Drain Current note1 -20.4 A PD Power Dissipation TA = 25 ℃ 2.15 W RθJA Thermal Resistance Junction-Ambient 1 125 ℃ /W RθJC Thermal Resistance Junction-Case1 104 ℃ /W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ |
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