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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AP3409AI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP3409AI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP3409AI -30V P-Channel Enhancement Mode MOSFET AP3409AI REV1.0 永源微電子科技有限公司 Description The AP3409AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =12A RDS(ON) <30mΩ @ VGS=10V （Type：25mΩ） Application Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3409AI SOT23L 3490M 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ -4.5V1 -12 A ID@TC=70 ℃ Continuous Drain Current, VGS @ -4.5V1 -7.5 A IDM Pulsed Drain Current2 -36 A PD@TC=25 ℃ Total Power Dissipation3 1.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 125 ℃/W RθJC Thermal Resistance Junction-Case1 110 ℃/W |
유사한 부품 번호 - AP3409AI |
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유사한 설명 - AP3409AI |
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