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AP3416AI 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP3416AI 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP3416AI 20V N-Channel Enhancement Mode MOSFET AP3416AI REV1.1 永源微電子科技有限公司 Description The AP3416AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =6.8A RDS(ON) < 22mΩ @ VGS=4.5V (Type:15mΩ) ESD≥2500HBM Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3416AI SOT23L 3416 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TA=25 ℃ Continuous Drain Current 6.8 A ID@TA=70 ℃ Continuous Drain Current 6.0 A IDM Pulsed Drain Current2 30 A PD@TA=25 ℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃/W RθJC Thermal Resistance Junction-ambient 1 85 ℃ /W |
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