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AP4412A 데이터시트(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP4412A 데이터시트(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP4412A 30V N-Channel Enhancement Mode MOSFET AP4412A REV1.0 永源微電子科技有限公司 Description The AP4412A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =25A RDS(ON) < 6.5mΩ @ VGS=10V (Type:5.2mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP4412A SOP-8L AP4412A XXXX YYYY 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 25 A ID@TC=75℃ Continuous Drain Current, VGS @ 10V1 18 A IDM Pulsed Drain Current2 240 A EAS Single Pulse Avalanche Energy3 56 mJ IAS Avalanche Current 15 A PD@TC=25℃ Total Power Dissipation4 46 W PD@TA=25℃ Total Power Dissipation4 2.72 W TSTG,TJ Storage Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 85 ℃/W RθJC Thermal Resistance Junction-Case1 2.72 ℃/W |
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