AP4435B

-30V P-Channel Enhancement Mode MOSFET

AP4435B RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-33

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-1.2

-1.5

-2.5

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS= -10V, ID= -10A

-

16

20

mΩ

VGS= -4.5V, ID= -5A

-

25

30

Ciss

Input Capacitance

VDS= -15V, VGS=0V,

f=1.0MHz

-

1550

-

pF

Coss

Output Capacitance

-

327

-

pF

Crss

Reverse Transfer Capacitance

278

pF

-

-

Qg

Total Gate Charge

VDS= -15V, ID= -9.1A,

VGS= -10V

-

30

-

nC

Qgs

Gate-Source Charge

-

5.3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

7.6

nC

-

-

td(on)

Turn-on Delay Time

VDD= -15V, ID= -6A,

VGS= -10V, RGEN=2.5Ω

-

14

-

ns

tr

Turn-on Rise Time

-

20

-

ns

td(off)

Turn-off Delay Time

-

95

-

ns

tf

Turn-off Fall Time

-

65

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-10

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-40

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -11A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-5A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.