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M36DR432C 데이터시트(PDF) 35 Page - STMicroelectronics

부품명 M36DR432C
상세설명  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36DR432C 데이터시트(HTML) 35 Page - STMicroelectronics

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M36DR432C, M36DR432D
Table 31. SRAM Read AC Characteristics
(TA = –40 to 85°C; VDDS =1.9V to 2.1V)
Note: 1. Sampled only. Not 100% tested.
Figure 16. SRAM Read Mode AC Waveforms, Address Controlled with UBS =LBS =VIL
Note: E1S = Low, E2S = High, GS =Low, WS = High.
Symbol
Alt
Parameter
SRAM
Unit
Min
Max
tAVAV
tRC
Read Cycle Time
85
ns
tAVQV
tAA
Address Valid to Output Valid
85
ns
tAXQX
tOH
Address Transition to Output Transition
10
ns
tBHQZ
tBHZ
UBS, LBS Disable to Hi-Z Output
25
ns
tBLQV
tBA
UBS, LBS Access Time
45
ns
tBLQX
tBLZ
UBS, LBS Enable to Low-Z Output
5
ns
tE1HQZ
tHZ1
Chip Enable 1 High to Output Hi-Z
25
ns
tE1LQV
tCO1
Chip Enable 1 Low to Output Valid
85
ns
tE1LQX
tLZ1
Chip Enable 1 Low to Output Transition
10
ns
tE2HQV
tCO2
Chip Enable 2 High to Output Valid
85
ns
tE2HQX
tLZ2
Chip Enable 2 High to Output Transition
10
ns
tE2LQZ
tHZ2
Chip Enable 2 Low to Output Hi-Z
25
ns
tGHQZ
tOHZ
Output Enable High to Output Hi-Z
25
ns
tGLQV
tOE
Output Enable Low to Output Valid
45
ns
tGLQX
tOLZ
Output Enable Low to Output Transition
5
ns
tPD
(1)
Chip Enable 1 High or Chip Enable 2 Low to Power
Down
100
ns
tPU
(1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
AI90217
tAVAV
tAVQV
tAXQX
A0-A17
DQ0-DQ15
VALID
DATA VALID
DATA VALID



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