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TCS12J 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 TCS12J
상세설명  isc Silicon PNP Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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TCS12J 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon PNP Power Transistor
TCS12J
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-BVCEO= -200V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):-1V(Max) @IC=-1A
APPLICATIONS
·
Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃
/W


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