IXTH02N250 datasheet(1/2 Pages) ISC

부품명	IXTH02N250

상세설명	N-Channel MOSFET Transistor

PDF	2 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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ISF1413

eq IXTH02N250

N-Channel MOSFET Transistor

www.iscsemi.com

1

FEATURES

· Drain Current -ID= 0.2A@ TC=25℃

· Drain Source Voltage -VDSS= 2500V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 450Ω(Max)@VGS= 10V

APPLICATIONS

· Pulse Circuits

· High Voltage Power Supplies

· Capacitor Discharge

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

2500

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

0.2

A

IDM

Drain Current-Single Pulse

0.6

A

PD

Total Dissipation

83

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.5

℃

/W

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IXTH02N250 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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