Electrical Characteristics (at Ta=25°C unless otherwise noted)

Page 2

Comchip Technology CO., LTD.

Units

Symbol

Parameter

Typ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

-30

-30

-10

5000

10000

V

V

V

µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Transition frequency

Min

Max

Conditions

VCE(sat)

VBE(on)

10000

20000

-1.5

-2.0

MHz

Collector-emitter saturation voltage

Base-emitter on voltage

IC = -100µA, IE = 0

IC = -0.1mA, IB = 0

IE = -100µA, IC = 0

IE = 0, VCB = -30V

IC = 0, VEB = -10V

VCE = -5V, IC = -10mA

IC = -100mA, IB = -0.1mA

-0.1

-0.1

µA

V

V

hFE

hFE

hFE

fT

125

VCE = -5V, IC = -10mA

VCE = -5V, IC = -100mA

VCE = -5V, IC = -100mA

MMBTA63-HF

MMBTA63-HF

MMBTA64-HF

MMBTA64-HF

IC = -100mA, VCE = -5V

IC = -10mA, VCE = -5V, f = 100MHz

REV:A

QW-JTR173

PNP Darlington Amplifier Transistor

Collector cut-off current

ICEO

IE = 0, VCE = -10V

-0.1

µA