M48T59 datasheet(15/21 Pages) STMICROELECTRONICS

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M48T59, M48T59Y, M48T59V

Figure 13. Supply Voltage Protection

AI02169

VCC

0.1

µF

DEVICE

VCC

VSS

POWER SUPPLY DECOUPLING and

UNDERSHOOT PROTECTION

ICC transients, including those produced by output

switching, can produce voltage fluctuations, re-

sulting in spikes on the VCC bus. These transients

can be reduced if capacitors are used to store en-

ergy, which stabilizes the VCC bus. The energy

stored in the bypass capacitors will be released as

low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic by-

pass capacitor value of 0.1µF (as shown in Figure

13) is recommended in order to provide the need-

ed filtering.

In addition to transients that are caused by normal

SRAM operation, power cycling can generate neg-

ative voltage spikes on VCC that drive it to values

below VSS by as much as one Volt. These nega-

tive spikes can cause data corruption in the SRAM

while in battery backup mode. To protect from

these voltage spikes, it is recommended to con-

nect a schottky diode from VCC to VSS (cathode

connected to VCC, anode to VSS). Schottky diode

1N5817 is recommended for through hole and

MBRS120T3 is recommended for surface mount

M48T59 데이터시트(PDF) 15 Page - STMicroelectronics