SMD ESD Protection Diode

Comchip Technology CO., LTD.

Page 2

Electrical Characteristics (at TJ=25°C unless otherwise noted)

REV:A

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

µA

IT = 1mA

VRWM = 24V

V

Working peak reverse voltage (Note 1)

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

24

27.4

21

Reverse leakage current

IR

1

IPP = 1A, TP = 8/20µs

V

VC

39

Pin 2 to Pin 1

Clamping voltage (Note 2)

VC

V

IPP = 3A, TP = 8/20µs

IPP = 5A, TP = 8/20µs

VC

46

53.5

Breakdown voltage

VBR

µA

IT = 1mA

VRWM = 15V

V

Working peak reverse voltage (Note 1)

VRWM

15

17.4

Reverse leakage current

IR

1

IPP = 1A, TP = 8/20µs

V

VC

24

Pin 1 to Pin 2

Clamping voltage (Note 2)

VC

V

IPP = 5A, TP = 8/20µs

IPP = 9.5A, TP = 8/20µs

VC

29.3

33.3

AQW-JP022

34

21

Notes: 1. Device stressed with ten non-repetitive ESD pulse.

2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5.