SMD ESD Protection Diode

Page 2

Comchip Technology CO., LTD.

REV:A

AQW-JP019

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

IT = 0.1mA

Reverse leakage current

IR

µA

VRWM = 1.5V

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz, Between any I/O

1.5

3

0.13

0.3

0.1

V

CJ

pF

VR = 0V, f = 1MHz, I/O to GND

pF

0.25

CJ

VR = 1V, f = 1MHz, I/O to GND

0.35

V

Clamping voltage

3.2

VC

IPP = 4A, TP = 8/20µs

IPP = 1A, TP = 8/20µs

1.85

VC

4

2.5

Ω

RDYN

0.2

ESD Dynamic turn-on resistance

IEC 61000-4-2 0~+8kV,

Contact mode, T=25°C

Notes: 1. The default test is I/O pin to ground.

2. The strong snap-back to a low holding voltage move into latch-up mode by an ESD event.

When designing the printed-circuit board (PCB), give careful consideration to impedance matching and signal coupling.

Do not connect the data lines to unlimited DC current sources like, for example, abattery, to avoid the device is “locked” in conducting mode.