US3M

Document number: DS37228 Rev. 5 - 2

2 of 5

www.diodes.com

April 2015

© Diodes Incorporated

US3M

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

1,000

V

RMS Reverse Voltage

VR(RMS)

700

V

Average Rectified Output Current

@ TT = +75°C

IO

3.0

A

Non-Repetitive Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

120

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Terminal (Note 7)

RθJT

26

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

V(BR)R

1,000

—

—

V

IR=10μA

Forward Voltage

VF

—

1.5

1.8

V

IF = 3.0A

Leakage Current (Note 5)

IR

—

—

2.2

14

10

500

μA

VR =1,000V, TA = +25°C

VR =1,000V, TA = +125°C

Reverse Recovery Time

trr

—

70

85

ns

IF = 0.5A, IR = 1.0A, Irr = 0.25A

Total Capacitance

CT

—

25

—

pF

VR = 4V, f =1.0MHz

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.15" x 0.26" copper pads.

7. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.56" x 0.73" copper pads.

Figure 1 DC Forward Current Derating

T , AMBIENT TEMPERATURE (°C)

A

0

0 50

.

1

1 50

.

2

2 50

.

3

3 50

.

4

25

50

75

100

125

150

175

Note 6

Note 7

Figure 2 Typical Reverse Characteristics

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

0.01

0.1

1

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T = -55°C

A

T =175°C

A

T = 25°C

A

T = 85°C

A

T =100°C

A

T = 125°C

A

T =150°C

A