AI02074

19

A0-A18

W

DQ0-DQ7

VCC

M29W040

G

E

VSS

8

Figure 1. Logic Diagram

M29W040

4 Mbit (512Kb x8, Uniform Block)

Low Voltage Single Supply Flash Memory

NOT FOR NEW DESIGN

M29W040 is replaced by the M29W040B

2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 100ns

BYTE PROGRAMMING TIME: 12

µs typical

ERASE TIME

– Block: 1.5 sec typical

– Chip: 2.5 sec typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

ERASE SUSPEND and RESUME MODES

LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 20

µA typical

– Automatic Stand-by mode

POWER DOWN SOFTWARE COMMAND

– Power-down mode: 1

µA typical

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E3h

A0-A18

Address Inputs

DQ0-DQ7

Data Input / Outputs

E

Chip Enable

G

Output Enable

W

Write Enable

Supply Voltage

Ground

Table 1. Signal Names

PLCC32 (K)

TSOP32 (N)

8 x 20mm

November 1999

1/31

This is information on a product still in productionbut not recommended for new designs.

TSOP32 (NZ)

8 x 14mm