MOSFET

Fig.8 - Threshold Voltage vs

Junction Temperature

Junction Temperature, TJ (°C)

Fig.10 - Gate Charge Characteristics

Total Gate Charge, Qg (nC)

Fig.12 - Maximum Drain Current vs

Junction Temperature

Fig.7 - Capacitance vs Drain-to-Source

Voltage

Drain-Source Voltage, -VDS (V)

Fig.9 - Forward Transfer Admittance

vs Drain Current

Drain Current, -ID (A)

Drain-Source Voltage, -VDS (V)

1

10

175

75

-75

0

0.4

0.6

1.0

0

4

10

175

25

0

-50

1.4

0.01

10

0.1

8

Fig.11 - Maximum Safe Operating Area

1.2

0

100

10

Comchip Technology CO., LTD.

Page 4

-25

25 50

100 125 150

0.001

0.01

0.1

100

1

0

2

6

0.01

1

10

100

0.1

Junction Temperature, TJ (°C)

75

50

125

100

150

100000

0.8

REV:A

20

1

0.01

0.1

8

16

4

12

10

100

100

50

100

200

150

30

10

QW-JTR234

Typical Rating and Characteristic Curves (CMS65P10D2-HF)

1

1000

10000

20

Crss

Coss

Ciss

VDS= -10V

TA=25°C

Pulsed

TA=25°C, TJ=150°C

VGS= -10V, RθJA=16°C/W

single pulse

100µs

1ms

10ms

100ms

10s

1s

DC

100s

RDS(ON) Limited

ID= -1mA

ID= -250µA

VDS= -50V

ID= -15A

VGS= -10V, RθJA=16°C/W