| 전자부품 데이터시트 검색엔진 |
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MM54HC02 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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MM54HC02 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
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3 / 4 page ![]() AC Electrical Characteristics VCCe5V TAe25 C CLe15 pF tretfe6ns Symbol Parameter Conditions Typ Guaranteed Units Limit tPHL tPLH Maximum Propagation 8 15 ns Delay AC Electrical Characteristics VCCe20V to 60V CLe50 pF tretfe6 ns (unless otherwise specified) TAe25 C 74HC 54HC Symbol Parameter Conditions VCC TAeb40 to 85 CTAeb55 to 125 C Units Typ Guaranteed Limits tPHL tPLH Maximum Propagation 20V 45 90 113 134 ns Delay 45V 9 18 23 27 ns 60V 8 15 19 23 ns tTLH tTHL Maximum Output Rise 20V 30 75 95 110 ns and Fall Time 45V 8 15 19 22 ns 60V 7 13 16 19 ns CPD Power Dissipation (per gate) 20 pF Capacitance (Note 5) CIN Maximum Input 5 10 10 10 pF Capacitance Note 5 CPD determines the no load dynamic power consumption PDeCPD VCC2 faICC VCC and the no load dynamic current consumption ISeCPD VCC faICC 3 |
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