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APM32F103C8T6-R 데이터시트(PDF) 42 Page - Geehy Semiconductor Co., Ltd. |
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APM32F103C8T6-R 데이터시트(HTML) 42 Page - Geehy Semiconductor Co., Ltd. |
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42 / 78 page ![]() w w w. g e e h y. c o m P a g e 41 5.7.7 Backup Domain Power Consumption Table 31VBAT Power Consumption Symbol Parameter Condition Typical value (1), TA=25℃ Maximum value (1), V BAT=3.6V Unit VBAT=2.4V VBAT=3.3V VBAT=3.6V TA=85℃ TA=105℃ μA IDD_VBAT Backup area Supply current The low-speed oscillator and RTC are in ON state 1.03 1.34 1.47 3.31 4.95 Note: The data are obtained from a comprehensive evaluation and are not tested in production. 5.8 Wake-up time in low-power mode The time values in the table are measured using an 8MHz HSICLK oscillator as the wake-up clock source at the wake-up stage. The clock source used when wake-up depends on the current operation mode: Stop or standby mode: The clock source is RC oscillator Sleep mode: The clock source is the clock set when entering sleep mode Table 32Wake-up time in low-power mode Symbol Parameter Typical value Unit tWUSLEEP(1) Wake up from sleep mode 0.56 μs tWUSTOP(1) Wake up from stop mode (the voltage regulator is in operation mode) 2.29 μs Wake up from stop mode (the voltage regulator is in low-power mode) 3.66 tWUSTDBY(1) Wake up from standby mode 32.62 μs 1. The wake-up time is measured from the start of the wake-up event to the first instruction read by the user program. 5.9 I/O port characteristics Table33 DC Characteristics (TA=-40℃-105℃, VDD=2.7~3.6V) Symbo l Parameter Condition Minimum value Typical Maximum value Unit VIL Low-level input voltage TTL port -0.5 - 0.8 V VIH Standard I/O pin, high-level input voltage 2 - VDD+0.5 FT I/O pin (1), high-level input voltage 2 - 5.5 |
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