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APM32F103CBT6-R 데이터시트(PDF) 42 Page - Geehy Semiconductor Co., Ltd.

부품명 APM32F103CBT6-R
상세설명  Arm® Cortex® -M3 based 32-bit MCU
PDF  78 Pages
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APM32F103CBT6-R 데이터시트(HTML) 42 Page - Geehy Semiconductor Co., Ltd.

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P a g e 41
5.7.7
Backup Domain Power Consumption
Table 31VBAT Power Consumption
Symbol
Parameter
Condition
Typical value (1), TA=25℃
Maximum value (1), V
BAT=3.6V
Unit
VBAT=2.4V
VBAT=3.3V
VBAT=3.6V
TA=85℃
TA=105℃
μA
IDD_VBAT
Backup
area
Supply
current
The low-speed
oscillator and RTC
are in ON state
1.03
1.34
1.47
3.31
4.95
Note: The data are obtained from a comprehensive evaluation and are not tested in production.
5.8
Wake-up time in low-power mode
The time values in the table are measured using an 8MHz HSICLK oscillator as the wake-up
clock source at the wake-up stage. The clock source used when wake-up depends on the
current operation mode:
 Stop or standby mode: The clock source is RC oscillator
 Sleep mode: The clock source is the clock set when entering sleep mode
Table 32Wake-up time in low-power mode
Symbol
Parameter
Typical
value
Unit
tWUSLEEP(1)
Wake up from sleep mode
0.56
μs
tWUSTOP(1)
Wake up from stop mode (the voltage regulator is in operation mode)
2.29
μs
Wake up from stop mode (the voltage regulator is in low-power mode)
3.66
tWUSTDBY(1)
Wake up from standby mode
32.62
μs
1.
The wake-up time is measured from the start of the wake-up event to the first instruction read by
the user program.
5.9
I/O port characteristics
Table33 DC Characteristics (TA=-40℃-105℃, VDD=2.7~3.6V)
Symbo
l
Parameter
Condition
Minimum
value
Typical
Maximum
value
Unit
VIL
Low-level input voltage
TTL port
-0.5
-
0.8
V
VIH
Standard I/O pin, high-level input
voltage
2
-
VDD+0.5
FT I/O pin (1), high-level input voltage
2
-
5.5



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