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ISCF80138 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCF80138 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF80138 eq IMW120R350M1H SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 1mA 1200 -- -- V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA 3.5 -- 5.7 V RDS(on) Drain-Source On-stage Resistance VGS= 18V, ID= 2A -- 350 468 mΩ IGSS Gate Source Leakage Current VGS= -7/+23V, VDS= 0V -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V -- -- 20 uA VSD Diode Forward Voltage ISD= 2A, VGS= 0V -- 4.1 5.2 V PACKAGE OUTLINE (UNIT: mm) |
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