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RGTH50TK65 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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RGTH50TK65 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2315 eq RGTH50TK65 Field Stop Trench IGBT www.iscsemi.com 1 DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC= 25A · High Speed Switching · With Integrated Fast Recovery Diode APPLICATIONS · Inverter Circuit · UPS,PFC · Bridge Circuit ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 650 V VGES Gate-Emitter Voltage ± 30 V IC Collector Current-Continuous @ TC=25℃ 26 A IC Collector Current-Continuous @ TC=100℃ 16 A ICM Pulsed Collector Current 100 A PD Power Dissipation @TC=25℃ 59 W Tj Operating Junction Temperature -40~175 ℃ Tstg Storage Temperature Range -40~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 2.51 ℃ /W |
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