STT253 datasheet(2/4 Pages) SIRECTIFIER

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STT253

Thyristor-Thyristor Modules

Symbol

Test Conditions

Characteristic Values

Unit

IRRM

TVJ=TVJM; VR=VRRM; VD=VDRM

FEATURES

* International standard package

* Direct copper bonded Al2O3-ceramic

base plate

* Planar passivated chips

* Isolation voltage 3600 V~

ADVANTAGES

* Space and weight savings

* Simple mounting

* Improved temperature and power

cycling

* Reduced protection circuits

APPLICATIONS

* Motor control

* Power converter

* Heat and temperature control for

industrial furnaces and chemical

processes

* Lighting control

* Contactless switches

IDRM

VT, VF

IT, IF=750A; TVJ=25

1.7

VTO

For power-loss calculations only (TVJ=140

oC)

0.85

1.1

VD=6V;

TVJ=25

TVJ=-40

VGT

VD=6V;

TVJ=25

TVJ=-40

IGT

150

200

VGD

TVJ=TVJM;

VD=2/3VDRM

0.25

IGD

TVJ=25

oC; VD=6V; RGK=

150

TVJ=25

oC; tp=30us; VD=6V

IG=0.45A; diG/dt=0.45A/us

300

per thyristor/diode; DC current

per module

RthJC

0.129

0.0645

K/W

per thyristor/diode; DC current

per module

RthJK

0.169

0.0845

K/W

Creeping distance on surface

12.7

Strike distance through air

9.6

Maximum allowable acceleration

m/s

TVJ=25

oC; VD=1/2VDRM

IG=1A; diG/dt=1A/us

tgd

TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us

typ.

VR=100V; dv/dt=50V/us; VD=2/3VDRM

200

TVJ=125

oC; IT, IF=400A; -di/dt=50A/us

760

IRM

275

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