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DIO1467QL16 데이터시트(PDF) 6 Page - DIOO MICROCIRCUITS CO., LTD |
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DIO1467QL16 데이터시트(HTML) 6 Page - DIOO MICROCIRCUITS CO., LTD |
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6 / 14 page ![]() DIO1467, Version 1.2, Dec 2023 www.dioo.com © 2023 DIOO MICROCIRCUITS CO., LTD. 3 4. ESD Ratings When a statically-charged person or object touches an electrostatic discharge sensitive device, the electrostatic charge might be drained through sensitive circuitry in the device. If the electrostatic discharge possesses sufficient energy, damage might occur to the device due to localized overheating. Model Condition Rating Unit HBM ESDA/JEDEC JS-001 ±8000 V CDM ESDA/JEDEC JS-002 ±2000 V 5. Electrical Characteristics All typical values are at VCC = 3.3 V, TA = 25°C unless otherwise specified. Symbol Parameter Conditions VCC (V) Temp (°C) Min Typ Max Unit DC electrical characteristics VIH Input voltage high 1.65 to 5.5 -40 to 105 0.9 V VIL Input voltage low 1.65 to 5.5 -40 to 105 0.3 V IIN Control input leakage VSW = 0 to VCC 5.5 25 -1 1 μA INC(OFF) INO(OFF) Off leakage current nB0, nB1 = 0.3 or 3.6 V 5.5 25 -1 1 μA INC(ON) INO(ON) On leakage current nB0, nB1 = 0.3 or 3.6 V 5.5 25 -1 1 μA ICC Quiescent supply current VIN = 0 V or VCC, IOUT = 0 V 5.5 25 1.2 2 μA ROND 1A, 2A, 3A, 4A, resistance IOUT = -20 mA, VSW = 2.3 V 2.7 -40 to 105 2.4 Ω ICCT Increase in ICC current per control voltage and VCC VIN = 1.8 V 5.5 25 1.1 μA VIN = 2.6 V 5.5 25 1.2 μA AC electrical characteristics tON Turn-on time (1A, 2A, 3A, 4A) RL = 50 Ω, CL = 35 pF, VSW = 1.5 V 2.7 to 3.6 -40 to 105 90 ns tOFF Turn-off time (1A, 2A, 3A, 4A) RL = 50 Ω, CL = 35 pF, VSW = 1.5 V 2.7 to 3.6 -40 to 105 60 ns tBBM Break-before-make RL= 50 Ω, CL = 35 pF, VSW = 1.5 V 2.7 to 3.6 25 50 ns tPD (1) Propagation delay (1A, 2A, 3A, 4A) RL = 50 Ω, CL = 35 pF 3.3 25 0.5 ns OIRR Off isolation (1A, 2A, 3A, 4A) RL = 50 Ω, f = 10 MHz 2.7 to 3.6 25 -51 dB |
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