M59MR032C, M59MR032D

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Table 34. Program, Erase Times and Program, Erase Endurance Cycles

Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or

erase should perform significantly better.

2. Excludes the time needed to execute the sequence for program instruction.

3. Same timing value if

Note: 1. All other timings are defined in Read AC Characteristics table.

Parameter

Min

Typ

Typical after

100k W/E Cycles

Unit

Parameter Block (4 KWord) Erase (Preprogrammed)

2.5

0.15

0.4

sec

Main Block (32 KWord) Erase (Preprogrammed)

10

1

3

sec

Bank Erase (Preprogrammed, Bank A)

2

6

sec

Bank Erase (Preprogrammed, Bank B)

10

30

sec

20

25

sec

(2)

10

sec

200

10

10

µs

Double Word Program

200

10

10

µs

Program/Erase Cycles (per Block)

100,000

cycles

Symbol

Parameter

Min

Max

Unit

Chip Enable High to DQ7 Valid (Program, E Controlled)

10

200

µs

Chip Enable High to DQ7 Valid (Block Erase, E Controlled)

1.0

10

sec

Chip Enable High to Output Valid (Program)

10

200

µs

Chip Enable High to Output Valid (Block Erase)

1.0

10

sec

Q7 Valid to Output Valid (Data Polling)

0

ns

Write Enable High to DQ7 Valid (Program, W Controlled)

10

200

µs

Write Enable High to DQ7 Valid (Block Erase, W Controlled)

1.0

10

sec

Write Enable High to Output Valid (Program)

10

200

µs

Write Enable High to Output Valid (Block Erase)

1.0

10

sec