DIO60120

Version 1.3, Aug 2025

www.dioo.com

© 2025 Dioo Microcircuits Co., Ltd. Jiangsu

5

6. Electrical Characteristics

The values are obtained under these conditions unless otherwise specified: VIN = 5 V, VOUT = 1.8 V, L1 = 2.2 µH,

COUT = 22 µF, TA = 25°C.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VIN

Input voltage range

2.5

5.5

V

IQ

Quiescent current

IOUT = 0, FB = 0.65 V

15

µA

ISHDN

Shutdown current

EN = 0

0.1

1

µA

VREF

Feedback reference voltage

0.588

0.6

0.612

V

RDS(ON),P

PFET RON

IOUT = 100 mA

100

mΩ

RDS(ON),N

NFET RON

IOUT = 100 mA

80

mΩ

ILIM

PFET current limit

2.7

A

VENH

EN rising threshold

1

V

VENL

EN falling threshold

0.4

V

VUVLO

Input undervoltage lockout threshold

2.15

2.45

V

VHYS

undervoltage lockout hysteresis

0.15

V

fSW

Switching frequency

IOUT = 500 mA

1

MHz

VPG,UV_R

Undervoltage PG rising threshold

Referenced to VFB nominal

95

%

VPG,UV_F

Undervoltage PG falling threshold

90

%

VPG,OV_R

Overvoltage PG rising threshold

105

%

VPG,OV_F

Overvoltage PG falling threshold

110

%

Min ON time

80

ns

Max duty cycle

100

%

tSS

Soft-start time

VOUT rise from 10% to 90%

0.55

ms

ENR-

Pull-down resistor

1

MΩ

Rdis

Output discharge resistor

VEN = 0 V, VOUT = 1.2 V

1

kΩ

TSD

Thermal shutdown temperature

150

°C

THYS

Thermal shutdown hysteresis

20

°C

Note:

(1) Specifications subject to change without notice.