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MBR60H100CT 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 MBR60H100CT
상세설명  Schottky Barrier Rectifier Diode
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MBR60H100CT 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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Schottky Barrier Rectifier Diode
MBR60H100CT
www.iscsemi.com
1
FEATURES
· High Surge Capacity
· Low Power Loss
· High Efficiency
APPLICATIONS
· Power Management
· Instrumentation
· Power Supply-Output Rectification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
IF(AV)
Average Rectified Forward Current,
TC=155℃
Per diode
30
A
Per device
60
A
IFSM
Nonrepetitive Peak Surge Current,
(Surge applied at rated load conditions halfwave, single
phase, 60 Hz)
350
A
IFRM
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
60
A
TJ
Max. Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case(Min. Pad)
1.0
℃
/W


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