isc N-Channel MOSFET Transistor

STP12N120K5

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V; ID= 1mA

1200

--

V

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID= 100uA

3.0

5.0

V

RDS(on)

Drain-Source Saturation Voltage

VGS= 10V; ID= 6A

--

690

mΩ

IGSS

Gate-Body Leakage Current

VGS=±20V; VDS= 0V

--

±

10

uA

IDSS

Zero Gate Voltage Drain Current

VDS= 1200V; VGS= 0V

--

1.0

uA

VSD

Diode Forward Voltage

IS= 12.0A; VGS= 0V

--

1.5

V

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