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R5F10DMDCLFB 데이터시트(PDF) 88 Page - Renesas Technology Corp

부품명 R5F10DMDCLFB
상세설명  RENESAS MCU
PDF  139 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F10DMDCLFB 데이터시트(HTML) 88 Page - Renesas Technology Corp

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RL78/D1A
3. ELECTRICAL SPECIFICATIONS (J GRADE PRODUCT)
R01DS0463EJ0120 Rev. 1.20
Page 88 of 135
Mar 31, 2026
3.9 Capacitance Connected to REGC
TA = -40 to +85
°C
Items
Symbols
Conditions
MIN.
TYP.
MAX.
Unit
Capacitance
CREG
0.47
1.0
μF
3.10 Flash programming characteristics
TA = -40 to +85
°C, 2.7 ≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V
Items
Symbols
Conditions
MIN.
TYP.
MAX.
Unit
VDD supply current
IDD
Programming current
12.2
mA
System Clcok
frequency
fCLK
2.7 V
≤ VDD ≤ 5.5 V
2
32
MHz
Number of
Code Flash
rewritesNotes 1, 2, 3
Cerwr
Retained for 20 years
1000
Times
Number of
Data Flash
rewritesNotes 1, 2, 3
Cerwr
Retained for 20 years
10000
Times
Notes 1.
1 erase + 1 write after the erase is regarded as 1 rewrite.
The retaining years are until next rewrite after the rewrite.
2.
When using flash memory programmer and Renesas Electronics self programming library.
3.
These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics Corporation.
Caution Different voltage between EVDD and VDD is allowed only when LCDM register is initial value.



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