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MJE210 데이터시트(PDF) 1 Page - STMicroelectronics |
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MJE210 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() MJE210 SILICON PNP TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. INTERNAL SCHEMATIC DIAGRAM September 1997 3 2 1 SOT-32 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -40 V VCEO Collector-Emitter Voltage (IB = 0) -25 V VEBO Base-Emitter Voltage (IC = 0) -8 V IC Collector Current -5 A ICM Collector Peak Current -10 A IB Base Current -1 A Ptot Total Power Dissipation at Tcase ≤ 25 oC at Tamb ≤ 25 oC 15 1.5 W Tstg Storage Temperature -65 to 150 oC Tj Max Operating Junction Temperature 150 oC 1/4 |
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