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MSC80186 데이터시트(PDF) 1 Page - STMicroelectronics |
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MSC80186 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() October 1992 GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .230 4L STUD (S027) hermetically sealed . EMITTER BALLASTED . CLASS A LINEAR OPERATION . COMMON EMITTER . VSWR CAPABILITY 15:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.5 dB @ 2 GHz . POUT = 30.0 dBm MIN. DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. PIN CONNECTION BRANDING 80186 ORDER CODE MSC80186 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) — W IC Device Bias Current 500 mA VCE Collector-Emitter Bias Voltage* 20 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 17 °C/W *Applies only to rated RF amplifier operation MSC80186 1. Collector 3. Base 2. Emitter 4. Emitter THERMAL DATA 1/6 |
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