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BUF742 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUF742 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon NPN Power Transistor BUF742 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.4V(Max) @IC= 2.5A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 11 V IC Collector Current 5 A ICM Collector Peak Current 7.5 A IB Base current 2.5 A IBM Base peak current 4 A PC Total Power Dissipation 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W |
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