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MSC81250M 데이터시트(PDF) 1 Page - STMicroelectronics |
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MSC81250M 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() October 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetically sealed . REFRACTORY\GOLD METALLIZATION . RUGGEDIZED VSWR 20:1 . INTERNAL INPUT/OUTPUT MATCHING . LOW THERMAL RESISTANCE . METAL/CERAMIC HERMETIC PACKAGE . POUT = 250 W MIN. WITH 6.2 dB GAIN DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81250M is housed in the unique AMPAC ™ package with internal input/output matching structures. PIN CONNECTION BRANDING 81250M ORDER CODE MSC81250M ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 80°C) 600 W IC Device Current* 17.8 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation MSC81250M 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/5 |
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