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MBR10100CT 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR10100CT 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schotty Barrier Diode MBR10100CT www.iscsemi.com 1 FEATURES · Low Power Loss · Low Forward Voltage Drop · Low Leadkage Current APPLICATIONS · Switching Power Supply (SPS) · Freewheeling Diode · DC/DC Converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Output Current@TC=100℃ 5*2 A IFSM Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load 110 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -50~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.0 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 5A -- -- 0.84 V IR Maximum Instantaneous Reverse Current VR= VRWM -- -- 50 uA |
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